AlGaN/GaN high electron mobility transistors on Si with sputtered TiN Gate

Autor:	Yang Li, Geok Ing Ng, Subramaniam Arulkumaran, Chandra Mohan Manoj Kumar, Kian Siong Ang, Zhi Hong Liu
Rok vydání:	2016
Zdroj:	2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
DOI:	10.1109/iciprm.2016.7528844
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::82b3b2d62e261cbf407b37e0b1773f32 https://doi.org/10.1109/iciprm.2016.7528844 Zobrazit plný text záznamu