Conduction mechanism of metal-TiO2-Si structures

Autor:	I. A. Prudaev, V. M. Kalygina, O. P. Tolbanov, I. M. Egorova
Rok vydání:	2015
Předmět:	Materials science Silicon Condensed matter physics Annealing (metallurgy) chemistry.chemical_element Dielectric Thermal conduction Space charge Titanium oxide Condensed Matter::Materials Science chemistry Depletion region Electronic engineering Charge carrier
Zdroj:	2015 International Siberian Conference on Control and Communications (SIBCON).
Popis:	The influence of annealing of titanium oxide films on the currents of metal-TiO 2 -n-Si structures was investigated. It has been shown that regardless of the annealing temperature the conductivity of structures at positive potentials on the gate is determined by currents limited by the space charge in the dielectric with traps exponentially distributed on energy. At negative potentials the main contribution to the current is the thermal generation of charge carriers in the space charge region in the silicon. Interface properties of TiO 2 -n-Si depend on the structural and phase state of the titanium oxide film which are determined by the annealing temperature.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::82b30a2c645d838d9b6614f379bfabdb https://doi.org/10.1109/sibcon.2015.7147086 Zobrazit plný text záznamu