Stable cascode GaN HEMT operation by direct gate drive
| Autor: | Masataka Tsuji, Kentaro Ikeda, Masahiro Koyama, Toru Sugiyama, Akira Yoshioka, Hung Hung, Takenori Yasuzumi, Yosuke Kajiwara, Yasuhiro Isobe, Shinichi Umekawa, Yiyao Liu, Yusuke Sato |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering Gate resistance Transistor Failure rate Slew rate 02 engineering and technology High-electron-mobility transistor 01 natural sciences law.invention law 0103 physical sciences MOSFET 0202 electrical engineering electronic engineering information engineering Charge pump Optoelectronics Cascode business |
| Zdroj: | 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| DOI: | 10.1109/ispsd46842.2020.9170130 |
| Popis: | We describe a proposed cascode GaN device configuration that allows stable operation during zero voltage switching (ZVS) turn-on transition and suppresses non-ZVS losses. We verified that application of our proposed device to an LLC resonant converter resulted in stable operation. In our device configuration, a GaN high-electron-mobility transistor (HEMT) gate is directly driven by a commercial Si MOSFET driver via a charge pump circuit. This allows the slew rate (dv/dt) to be controlled by an external gate resistance. In addition, we demonstrate that the 650-V normally-on GaN HEMT used in our proposed device configuration has highly reliable characteristics. The predicted lifetime for a 0.1% failure rate under actual bias conditions (Vds = 500 V at (150°C)) exceeds 1000 years (8.76 $\times $ 106)hr). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|