Liquid-phase-deposited high dielectric zirconium oxide for metal-oxide-semiconductor high electron mobility transistors
| Autor: | Chien Hua Yu, Chu An Chiu, Chang Luen Wu, Tsu Yi Wu, Yeong-Her Wang, Jian Xuan Xu, Po Wen Sze, Chih Chun Hu |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
business.industry Transistor Analytical chemistry Oxide High-electron-mobility transistor Dielectric Condensed Matter Physics Surfaces Coatings and Films law.invention Metal chemistry.chemical_compound chemistry law visual_art visual_art.visual_art_medium Optoelectronics Thin film business Instrumentation Layer (electronics) Voltage |
| Zdroj: | Vacuum. 118:142-146 |
| ISSN: | 0042-207X |
| Popis: | AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with a liquid phase deposited (LPD) ZrO2 thin film as gate insulator was fabricated. Compared with the conventional HEMT, the maximum drain current increases from 492 to 627 mA/mm, and leakage current is four orders magnitude lower. The gate swing voltage and off-state breakdown were also improved while applying ZrO2 oxide layer. |
| Databáze: | OpenAIRE |
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