| Popis: |
Summary form only given. The authors report the state-of-the-art RF performance of InAlAs/InP MODFETs, grown for the first time via MBE (molecular beam epitaxy). The S-parameters of the FETs were measured from 0.5 to 26.5 GHz for various bias voltages (both V/sub gs/ and V/sub ds/). Maximum stable gains (MSGs) of 13 and 11.5 dB at 18 and 26.5 GHz, respectively, were measured for a source-drain voltage of 7.0 V. Extrapolating MSG at 6 dB/octave, a maximum oscillation frequency of about 75 GHz is predicted. > |
