Autor:	J. Geddes, J.P. Mondal, D. Carlson, S. Bounnak, C. Anderson, M. Vickberg
Rok vydání:	1992
Předmět:	Power-added efficiency Engineering Radiation business.industry Amplifier RF power amplifier Electrical engineering Power bandwidth Condensed Matter Physics K band MESFET Ka band Electrical and Electronic Engineering business Monolithic microwave integrated circuit
Zdroj:	IEEE Transactions on Microwave Theory and Techniques. 40:563-566
ISSN:	0018-9480
DOI:	10.1109/22.121733
Popis:	A single-ended three-stage MESFET power amplifier designed for high-volume, low-cost applications shows an average of 15-21% power added efficiency in Ka-band with 100-150 mW of power output over 30-35 GHz. Delta >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::829df6b69ab48d196bbd47ce126526cd https://doi.org/10.1109/22.121733 Zobrazit plný text záznamu