$\beta$ -Ga2O3Solid-State Devices for Fast Neutron Detection
| Autor: | Axel Klix, K. Irmscher, P. Tutto, D. Gehre, D. Szalkai, Z. Galazka |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Nuclear and High Energy Physics Materials science Scattering Doping Diamond Biasing 02 engineering and technology engineering.material 021001 nanoscience & nanotechnology 01 natural sciences Monocrystalline silicon Crystal Nuclear magnetic resonance Nuclear Energy and Engineering 0103 physical sciences engineering Neutron detection Neutron Electrical and Electronic Engineering Atomic physics 0210 nano-technology |
| Zdroj: | IEEE Transactions on Nuclear Science. 64:1574-1579 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2017.2698831 |
| Popis: | Examination of Ga2O3 as solid-state nuclear detector was carried out. Ga2O3 is a wide bandgap material with beneficial physical properties that enable its application in harsh environmental conditions, such as elevated temperature or strong electromagnetic field; therefore, Ga2O3 could become a competitor of diamond and 4H silicon-carbide nuclear detectors. Furthermore, because of its high oxygen content the new detector material can play an important role in the field of reactor research due to the 16O(n, $\alpha )^{13}\text{C}$ reaction. Monocrystalline $\beta $ -Ga2O3 samples were investigated under 14 MeV fast neutron irradiation. On unintentionally doped semiconducting and Mg-doped insulating crystals metallic films were deposited in order to form the contact electrodes for biasing and to collect the electron-hole pairs generated by secondary particles after nuclear interactions between neutrons and the nuclei of the Ga2O3 crystal. The Mg-doped sample could be operated from zero up to more than 1000 V biasing level. The recorded electric signal and energy histograms were investigated. |
| Databáze: | OpenAIRE |
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