Strain-induced material intermixing in multiple-stacked Ge/Si quantum dots grown by chemical vapor deposition
| Autor: | Wen-Yen Cheng, Zingway Pei, Wen-Hao Chang, Li-Shyue Lai, An-Tai Chou, Tzu-Min Hsu, Pan-Shiu Chen |
|---|---|
| Rok vydání: | 2004 |
| Předmět: |
Materials science
Photoluminescence Silicon Strain (chemistry) Physics::Instrumentation and Detectors business.industry Physics::Optics chemistry.chemical_element Germanium Chemical vapor deposition Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science chemistry Quantum dot Energy shift Optoelectronics business Layer (electronics) |
| Zdroj: | CLEO/Pacific Rim 2003. The 5th Pacific Rim Conference on Lasers and Electro-Optics (IEEE Cat. No.03TH8671). |
| DOI: | 10.1109/cleopr.2003.1277176 |
| Popis: | Photoluminescence investigations on stacked Ge/Si quantum dots with different thicknesses of Si spacer layer are presented. According to the emission energy shift in the Ge dots, we found that thinner spacer will lead to remarkable Ge-Si intermixing. Such intermixing can be attributed to the strain-induced material intermixing, which tends to shallow the dot potential, soften the dot/spacer interface sharpness, and hence degrade their room-temperature emission properties. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|