Comparison of La-based high-k dielectrics: HfLaSiON and HfLaON
| Autor: | Hyuk-Min Kwon, Ook-Sang Yoo, In-Shik Han, Chang Yong Kang, Raj Jammy, Byoung Hun Lee, Yoon-Ha Jeong, Rino Choi, Hi-Deok Lee, Seung Chul Song, Min-Ki Na, Tae-Gyu Goo, Won-Ho Choi, Ga-Won Lee |
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| Rok vydání: | 2009 |
| Předmět: |
Condensed matter physics
Chemistry Gate dielectric Equivalent oxide thickness Carrier lifetime Dielectric Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Threshold voltage Orders of magnitude (capacitance) MOSFET Electrical and Electronic Engineering High-κ dielectric |
| Zdroj: | Microelectronic Engineering. 86:268-271 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2008.04.008 |
| Popis: | For the first time, we present a comparative study on HfLaSiON and HfLaON gate dielectric with an equivalent oxide thickness (EOT) of 0.8nm (T"i"n"v=1.2nm). A detailed DC analysis of I"o"n vs. I"o"f"f shows HfLaON performs somewhat better than HfLaSiON. However, positive bias temperature instability (PBTI) lifetime of HfLaSiON is higher than HfLaON by about 2 orders of magnitude. On the other hand, hot carrier stress lifetime for HfLaSiON was similar to that of HfLaON. From the activation energy and U-trap, we found that the cause of different threshold voltage (V"T) shifts under PBT stress and detrapping was originated from stable electron traps induced by different charge trapping rates. |
| Databáze: | OpenAIRE |
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