Evaluation for Anomalous Stress-Induced Leakage Current of Gate $ \hbox{SiO}_{2}$ Films Using Array Test Pattern
| Autor: | Y. Kumagai, Tadahiro Ohmi, S. Sugawa, Rihito Kuroda, Akinobu Teramoto, T. Inatsuka, Tomoyuki Suwa |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Transistor Oxide Electrical engineering Dielectric Flash memory Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Capacitor chemistry law Optoelectronics SILC Electrical and Electronic Engineering business Quantum tunnelling Electronic circuit |
| Zdroj: | IEEE Transactions on Electron Devices. 58:3307-3313 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | Using the array test pattern, gate current through the tunnel oxide on the order of 10-16 A can be measured for about 1 000 000 transistors within 4 min. Because this test pattern can be fabricated by simple processes and its peripheral circuits are simple structures, the tunnel dielectric formation method and condition can be changed drastically. It was found that anomalous stress-induced leakage current (SILC) appears or disappears by applying electrical stress, and it is annealed out during a relatively high temperature measurement at 60 °C. Random telegraph signal in SILC can be observed in some transistors. These are very similar phenomena observed in Flash memory cells. We consider that, using this test pattern for the development of tunnel oxide, we can clarify the origin of anomalous SILC and promote the downscaling of tunnel oxide thickness. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|