Effect of the Sb content and the n− and p−GaSb(100) substrates on the physical and chemical properties of InSb As1- alloys for mid-infrared applications: Analysis of surface, bulk and interface
| Autor: | S. A. Tomás, M. Ramírez-López, Y. L. Casallas-Moreno, G. Villa-Martínez, J. L. Herrera-Pérez, P. Rodríguez-Fragoso, G. González de la Cruz, J.G. Mendoza-Alvarez, Alfredo Cruz-Orea, M. Macias, A.L. Martínez-López |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Mechanical Engineering Alloy Metals and Alloys Analytical chemistry Heterojunction 02 engineering and technology Substrate (electronics) engineering.material 010402 general chemistry 021001 nanoscience & nanotechnology Thermal diffusivity Epitaxy Mole fraction 01 natural sciences 0104 chemical sciences Thermal conductivity Mechanics of Materials Antimonide Materials Chemistry engineering 0210 nano-technology |
| Zdroj: | Journal of Alloys and Compounds. 861:157936 |
| ISSN: | 0925-8388 |
| DOI: | 10.1016/j.jallcom.2020.157936 |
| Popis: | Antimonide-based family holds the potential for developing a new generation of mid-infrared applications. Here, we report on the growth of InSbxAs1-x alloys on n − and p − type GaSb(100) substrates varying the Sb mole fraction ( x ) , using the liquid phase epitaxy (LPE) technique. We show that the ternary alloy grown on the n − type GaSb substrate presents higher crystalline quality, thermal diffusivity and interfacial thermal conductivity, as compared to the one grown on pin equation type GaSb substrates which decrease as the Sb mole fraction (x) in the layer increases. Our results demonstrate that the InSb x As 1 - x / n − GaSb heterostructure reaches the thermal equilibrium faster than the InSb x As 1 - x / p − GaSb structure, with lower roughness, strain, as well as a better chemical abruptness at substrate-layer interface. We also find that the growth mechanism of the InSbxAs1-x alloy is constituted by In − As and In − Sb bonds. Furthermore, the Raman scattering spectra measured at different layer depths evidence that the crystalline quality improves with depth and allow the identification of an intrinsic depletion region. Since the InSbxAs1-x alloy presents a long-range atomic order grown on both n − and p − type GaSb substrates, the phonon-plasmon coupled L − and L + modes are observed, and from the L + coupled mode, we obtain the intrinsic carrier concentration and its variation with the Sb mole fraction. Therefore, this work provides important guidance on the structural, thermal, and chemical properties of the surface, bulk and interface of InSbxAs1-x alloys, that should be considered to improve the performance of future devices, such as better heat dissipation.$ |
| Databáze: | OpenAIRE |
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