An MBE growth facility for real‐time in situ synchrotron x‐ray topography studies of strained‐layer III–V epitaxial materials

Autor:	W.E. Hagston, S. J. Barnett, D. E. J. Soley, G. F. Clarke, A. D. Johnson, J. Quarrell, S. J. Aldridge, B. Lunn, C. R. Hogg, W. Lamb, A. G. Cullis, S. Cottrell, M. T. Emeny, C. R. Whitehouse, Brian K. Tanner
Rok vydání:	1992
Předmět:	Materials science business.industry Nucleation Synchrotron radiation Particle accelerator Epitaxy Synchrotron law.invention Optics law Thermal Dislocation business Instrumentation Molecular beam epitaxy
Zdroj:	Review of Scientific Instruments. 63:634-637
ISSN:	1089-7623 0034-6748
DOI:	10.1063/1.1142675
Popis:	This paper describes a unique combined UHV MBE growth x‐ray topography facility designed to allow the first real‐time synchrotron radiation x‐ray topography study of strained‐layer III–V growth processes. This system will enable unambiguous determination of dislocation nucleation and multiplication processes as a function of controlled variations in growth conditions, and also during post‐growth thermal processing. The planned experiments have placed very stringent demands upon the engineering design of the system, and design details regarding the growth chamber; sample manipulator, x‐ray optics, and real‐time imaging systems are described. Results obtained during a feasibility study are also presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::823f2e94c32f1b7226680bff7cdfe90e https://doi.org/10.1063/1.1142675 Zobrazit plný text záznamu