Growth of strained Si/relaxed SiGe heterostructures on Si(110) substrates using solid-source molecular beam epitaxy
| Autor: | Keisuke Arimoto, Naoto Utsuyama, Junji Yamanaka, Kiyokazu Nakagawa, Kosuke O. Hara, Shohei Mitsui, Hiroki Nakazawa, Noritaka Usami |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Electron mobility Materials science Strain (chemistry) business.industry Relaxation (NMR) Heterojunction 02 engineering and technology Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials 0103 physical sciences Materials Chemistry Optoelectronics Electrical and Electronic Engineering 0210 nano-technology Anisotropy business Layer (electronics) Molecular beam epitaxy |
| Zdroj: | Semiconductor Science and Technology. 32:114002 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/1361-6641/aa8a87 |
| Popis: | A strained Si/relaxed SiGe heterostructure grown on Si(110) substrate is attractive as a platform for high-hole-mobility Si-based electronic devices. To improve the electrical property, a smoother surface is desirable. In this study, we investigated surface morphology and microstructural aspects of strained Si/relaxed SiGe/Si(110) heterostructures grown by solid-source (SS) molecular beam epitaxy (MBE). It was revealed that SSMBE provides a way to grow strained Si/relaxed SiGe heterostructures with smooth surfaces. In addition, it was found that the strain in the SiGe layer of the SSMBE-grown sample is highly anisotropic whereas that of the GSMBE-grown sample is almost biaxially relaxed. Along with the surface morphology, the symmetry in degree of strain relaxation has implications for the electrical property. Results of a calculation shows that anisotropic strain is preferable for device application since it confines holes solely in the strained Si layer where hole mobility is enhanced. |
| Databáze: | OpenAIRE |
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