Structural and Electrical Properties of Nanostructured Ba0.8Sr0.2TiO3 Films Deposited by Pulsed Laser Deposition
| Autor: | A. Khodorov, Eduardo Alves, Javier Martín-Sánchez, José Silva, M. J. M. Gomes, Philippe Colomban, Mário Pereira, S. A. S. Rodrigues |
|---|---|
| Rok vydání: | 2012 |
| Předmět: |
010302 applied physics
Materials science Schottky barrier Analytical chemistry Schottky diode 02 engineering and technology 021001 nanoscience & nanotechnology Rutherford backscattering spectrometry 01 natural sciences Pulsed laser deposition symbols.namesake 0103 physical sciences symbols Thin film 0210 nano-technology Raman spectroscopy Ohmic contact Perovskite (structure) |
| Zdroj: | Journal of Nano Research. :299-306 |
| ISSN: | 1661-9897 |
| DOI: | 10.4028/www.scientific.net/jnanor.18-19.299 |
| Popis: | Barium Strontium Titanate Ba0.8Sr0.2TiO3 (BST) thin films have been deposited on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique. The X-ray diffraction (XRD) shows that the films crystallize in a perovskite phase. XRD and Atomic Force Microscopy (AFM) characterization reveal that the grains are nano-sized. Rutherford Backscattering Spectrometry (RBS) analysis shows the stoichiometry of the films to be close to the stoichiometry of the target. The Raman spectroscopy shows that the films exhibit the tetragonal structure by the presence of the Raman active modes at 301 cm-1 and 729 cm-1, at room temperature. Leakage current measurements of Au/ Ba0.8Sr0.2TiO3/Pt capacitors have been done, at room temperature, to investigate the conduction mechanisms of the films. We found that there are two different conduction regions in the capacitors, namely, an ohmic behavior at low voltages and a Schottky emission mechanism at high voltages. The Schottky barrier height has been estimated to be 0.99 eV. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|