| Autor: |
R.S. Balmer, S.J. Rashid, D.J. Twitchen, Gehan A. J. Amaratunga, Florin Udrea |
| Rok vydání: |
2008 |
| Předmět: |
|
| Zdroj: |
9th International Seminar on Power Semiconductors (ISPS 2008). |
| Popis: |
Novel alternatives to the conventional single crystal diamond Schottky metal-intrinsic-p + (m-i-p + ) diode is presented in this work. The conduction mechanism of the device is analysed and structural modifications to enhance its performance are proposed. The periodic inclusion of highly p + doped thin δ-layers and p + spots in the intrinsic voltage blocking layer of the diode drastically improves the forward performance of these devices enhancing the forward current of the device by a factor of 10 - 17 with a maximum forward current density of 40 A/cm 2 for a 2 kV device. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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