Autor: |
Deng Hua Li, Hui Gao, Hang Ma |
Rok vydání: |
2014 |
Předmět: |
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Zdroj: |
Applied Mechanics and Materials. :107-111 |
ISSN: |
1662-7482 |
DOI: |
10.4028/www.scientific.net/amm.668-669.107 |
Popis: |
The choice of materials and the design of device structure of the quantum dot light emitting diodes were investigated. The electron blocking layer or the hole injection layer was added into the fundamental structure. The results of theoretical analyses showed that the improved device structure can regulate the potential barrier height and the injection efficiency of the holes and electrons. In this way, the concentration of the holes and electrons can reach to a certain balance in the quantum dots layer, which consequently decreases the influence of the Auger quenching process and the luminous efficiency will be improved. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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