The effect of CdTe substrate orientation on the Movpe growth of CdxHg1−xTe
| Autor: | G. J. Russell, John Woods, Andy Brinkman, J. E. Hails |
|---|---|
| Rok vydání: | 1986 |
| Předmět: |
Inorganic Chemistry
Crystallography Reflection high-energy electron diffraction Lamella (surface anatomy) Materials science Scanning electron microscope Materials Chemistry Substrate (electronics) Metalorganic vapour phase epitaxy Condensed Matter Physics Grain structure Thermal conduction Cadmium telluride photovoltaics |
| Zdroj: | Journal of Crystal Growth. 79:940-945 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(86)90576-2 |
| Popis: | Layers of Cd x Hg 1− x Te have been grown by MOVPE on CdTe substrates oriented on /t 111t B and on the planes 2° off /t 100t towards (110). Their structure has been investigated using the combined techniques of RHEED and scanning electron microscopy. While the surfaces of layers grown on /t 111t substrates were smoother than those deposited on the samples cut 2° off /t 100t and also avoided the problem of lamella twins in the CdTe substrate, they invariably exhibited a twinned grain structure. Consequently it is concluded that for the purpose of device applications, particularly when conduction mechanisms in the plane of the layers are involved, growth on substrates cut 2° off /t 100t may be preferable. |
| Databáze: | OpenAIRE |
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