Enhancement of the magnetoresistance and negative differential conductance of nanostructure arrays
| Autor: | V. Estevez, Elena Bascones |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Materials science
Nanostructure Condensed matter physics Spintronics Magnetoresistance Coulomb blockade Biasing Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Ferromagnetism Condensed Matter::Strongly Correlated Electrons Quantum tunnelling Antiparallel (electronics) |
| Zdroj: | Physical Review B. 83 |
| ISSN: | 1550-235X 1098-0121 |
| DOI: | 10.1103/physrevb.83.020408 |
| Popis: | We theoretically show that the interplay between charging effects and the nonequilibrium spin accumulation has a dramatic effect in the current through an array of nanostructures attached to ferromagnetic electrodes. Large oscillations in the current as a function of bias voltage show up for parallel orientation of the electrodes' magnetizations. These oscillations originate in the inhomogeneity of the spin potentials through the array and correlate with oscillations in the spin accumulation. For antiparallel orientation the spin potential is homogeneous and the oscillations do not show up. This sensitivity results in a huge enhancement of the tunneling magnetoresistance as compared to the single-island case, and opens new routes for improving the spintronic response of nanodevices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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