Low-temperature synthesis of C60 thin films by ionized cluster beam deposition technique

Autor:	J.Y Feng, Xiangrong Zou, Sha Zhu, Junqing Xie
Rok vydání:	1999
Předmět:	Chemistry Analytical chemistry Infrared spectroscopy Substrate (electronics) Condensed Matter Physics Acceleration voltage Inorganic Chemistry symbols.namesake Carbon film Amorphous carbon Materials Chemistry symbols Fourier transform infrared spectroscopy Thin film Raman spectroscopy
Zdroj:	Journal of Crystal Growth. 200:441-445
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(98)01278-0
Popis:	C 60 films on Si(1 1 1) have been grown at low substrate temperature of 100°C by ionized cluster beam deposition technique. Fourier transform infrared (FTIR) transmission spectroscopy, Raman measurements and X-ray diffraction are employed to investigate the structure of deposited films. The results show that the acceleration voltage plays an important role in the growth of the films. As the acceleration voltage is moderate (∼100 V), a pristine C 60 film with face-centered-cubic (fcc) crystal structure can be grown. Further increase of the acceleration voltage leads to the formation of amorphous carbon (a-C) in the grown films. When the acceleration voltage is increased to 600 V, the deposited film has a complete amorphous carbon (a-C) structure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8233d071c3504d2926ea3b84decaee20 https://doi.org/10.1016/s0022-0248(98)01278-0 Zobrazit plný text záznamu Full Text from ScienceDirect