Reflecting p-contact based on thin ITO films for AlGaInN flip-chip LEDs
| Autor: | I. P. Smirnova, A. S. Pavlyuchenko, E. M. Arakcheeva, L. K. Markov, M. M. Kulagina |
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| Rok vydání: | 2009 |
| Předmět: |
Fabrication
Materials science business.industry Condensed Matter Physics Evaporation (deposition) Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Indium tin oxide law.invention law Optoelectronics Quantum efficiency business Layer (electronics) Flip chip Diode Light-emitting diode |
| Zdroj: | Semiconductors. 43:1521-1525 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782609110219 |
| Popis: | A reflecting contact to a p-GaN layer, used in fabrication of blue flip-chip light-emitting diodes, has been produced by deposition of thin indium tin oxide (ITO) films by electron-beam evaporation. The high reflectance of the contact, which exceeds that of a Ni/Ag contact, provides a 15–20% increase in the external quantum efficiency of light-emitting crystals. The forward voltage drops for crystals with an ITO(5 nm)/Ag(220 nm) contact are comparable with the corresponding values for crystals with a Ni(1.5 nm)/Ag(220 nm) contact. The specific resistance of the contact with an ITO layer is 3.7 × 10−3 Ω cm2. It is shown that, for ITO films produced by the given method, the optimal thicknesses providing the best electrical and optical characteristics of the crystals are in the range 2.5–5.0 nm. |
| Databáze: | OpenAIRE |
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