| Popis: |
Critical Dimension (CD) control of Gate Spacers is key to achieve in well controlled implantations and a tight distribution of Vt for transistors on semiconductors devices. Presently, historical methods for CD control (top‐down low‐voltage Scanning Electron Microscopy, Atomic Force Microscopy, Transmission Electron Microscopy or Electrical CD measurement) are facing limitations with regards to precision, matching, throughput or sample damage. So, with the reduction of design rules approaching the 65nm technology node, the need for a fast, precise and versatile “in‐line” (at the process step) measurement of the spacer width and profile becomes critical, in order to shorten the spacer process development phase and the response time to production excursions. In this paper, we investigate the metrology performances and limitations (sensitivity, precision and accuracy) of Scatterometry (SCD) based on Spectroscopic Ellipsometry (SE) for this application using a KLA‐TENCOR SpectraCD system. We show that it will ... |
