The role of acceptor density on the high channel carrier density I–V characteristics of AlGaAs/GaAs MODFETs
| Autor: | Richard J. Krantz, Walter L. Bloss |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
chemistry.chemical_classification
Analytical chemistry Charge density High-electron-mobility transistor Electron acceptor Condensed Matter Physics Acceptor Molecular physics Capacitance Electronic Optical and Magnetic Materials Threshold voltage chemistry Depletion region Materials Chemistry Electrical and Electronic Engineering Voltage |
| Zdroj: | Solid-State Electronics. 33:941-945 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(90)90076-q |
| Popis: | A triangular-well, one-subband, depletion layer model has been developed for the high density region of a MODFET. The high density operation is defined as when the channel carrier density, in the entire channel, is equal to or greater than m1kT/πh2. This high density model has been used to describe the effects of the depletion layer charge on the I–V characteristics. An approximation for the experimentally determined threshold voltage is derived. It is shown that for small acceptor densities, ∼1013 cm−3, the experimentally determined threshold voltage may differ from the strong inversion threshold voltage by ∼0.25 V. We show that this discrepancy is due to the effect of the depletion layer in the device capacitance and the AlGaAs layer capacitance. The effective layer thickness, Δd, is shown to decrease from ∼90 A at an acceptor density of 1013 cm−3 to 75 A at 1017 cm−3. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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