Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor
| Autor: | Nujhat Tasneem, Md. Samzid Bin Hafiz, Quazi D. M. Khosru, Md. Mohsinur Rahman Adnan |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Reverse short-channel effect Transistor Doping Electrical engineering Nanowire Drain-induced barrier lowering 02 engineering and technology Overdrive voltage 021001 nanoscience & nanotechnology 01 natural sciences law.invention Threshold voltage law Logic gate 0103 physical sciences Optoelectronics 0210 nano-technology business |
| Zdroj: | 2016 IEEE Region 10 Conference (TENCON). |
| Popis: | This work presents the evaluation, as well as comparison of Capacitance-Voltage (C-V) characteristic and threshold voltage variation of two different structures of Junction Less Nanowire Transistor (JLNT), Double Gate (DG-JLNT) and Rectangular Gate (RG-JLNT). The self-consistent solver, which takes wave function penetration and other quantum mechanical (QM) effects into account, has been utilized here to establish the C-V characteristics. Then the threshold voltage has been extracted from the C-V curve. The variation in C-V characteristic and threshold voltage with respect to change in different device parameters for both structures of JLNT has also been explored and compared. The results demonstrate that the sensitivity of threshold voltage to variation in nanowire thickness, oxide thickness and doping concentration is higher in DG-JLNT than in RG-JLNT. Therefore, RG-JLNT exhibits performance superior to DG-JLNT in terms of control over channel potential and short channel behavior. |
| Databáze: | OpenAIRE |
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