Influences of coexisting O2 in H2O-annealing ambient on thermal oxidation kinetics and MOS interface properties on 4H–SiC (1–100)
| Autor: | Qiao Chu, Masato Noborio, Sumera Shimizu, Koji Kita |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Thermal oxidation Materials science Annealing (metallurgy) Mechanical Engineering Kinetics Oxide Competitive relationship 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences law.invention chemistry.chemical_compound Capacitor Chemical engineering chemistry Mechanics of Materials law 0103 physical sciences Trap density General Materials Science Growth rate 0210 nano-technology |
| Zdroj: | Materials Science in Semiconductor Processing. 116:105147 |
| ISSN: | 1369-8001 |
| DOI: | 10.1016/j.mssp.2020.105147 |
| Popis: | On 4H–SiC (1–100) m-face substrate, the process design of SiO2 growth by a conventional thermal oxidation accompanied with post-oxidation annealing (POA) in H2O ambient was investigated, especially focusing on the impact of O2 or H2O composition in the POA ambient. From the oxidation kinetics study, the surface on m-face was found to be more reactive to O2 than to H2O in thermal oxidation at 1100–1300 °C, while co-existence of both oxidants resulted in the highest oxide growth rate. As for the electrical characteristics of MOS capacitors, it was clarified that the POA process in H2O with low O2 concentration ambient was beneficial in interface trap density (Dit) reduction on m-face, even though the observed competitive relationship between Dit and flat-band voltage (VFB) instability made it challenging to simultaneously suppress both of those two parameters on m-face. High O2 concentration POA ambient worsened both of those two parameters, suggesting additional defects being easily introduced on m-face by the coexisting O2 in the POA ambient. |
| Databáze: | OpenAIRE |
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