Epitaxial growth of praseodymium oxide on silicon
| Autor: | Eberhard Bugiel, Jinping Liu, H.-J. Müssig, H. J. Osten, P. Zaumseil |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Silicon Praseodymium business.industry Mechanical Engineering Oxide chemistry.chemical_element Mineralogy Heterojunction Condensed Matter Physics Epitaxy law.invention chemistry.chemical_compound chemistry Mechanics of Materials law Optoelectronics General Materials Science Thin film Scanning tunneling microscope business Molecular beam epitaxy |
| Zdroj: | Materials Science and Engineering: B. 87:297-302 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/s0921-5107(01)00728-0 |
| Popis: | Praseodymium oxide is a potential high-K dielectric with promising electrical properties. Here, we present results for crystalline growth of praseodymium oxide on Si. On Si(001) surfaces, crystalline Pr2O3 grows as (110) domains, with two orthogonal in-plane orientations. Epitaxial silicon overgrowth seems to be impossible. We obtain perfect epitaxial growth on Si(111). These layers can also be overgrown epitaxially with silicon. All layer growth experiments were performed using solid source molecular beam epitaxy. In addition, the initial stages of growth were studied by scanning tunneling microscopy. |
| Databáze: | OpenAIRE |
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