Homogeneity evaluation of Mg implanted GaN layer by on-wafer forward diode current mapping
| Autor: | Michitaka Yoshino, Tohru Nakamura, Kiyoji Ikeda, Kazuo Kuriyama, Hirofumi Tsuge |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Doping 02 engineering and technology Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Surfaces Coatings and Films Ion Ion implantation 0103 physical sciences Evaluation methods Homogeneity (physics) Materials Chemistry Optoelectronics Wafer 0210 nano-technology business Diode |
| Zdroj: | Surface and Coatings Technology. 355:7-10 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/j.surfcoat.2018.04.018 |
| Popis: | Ion implantation is a widely used doping technique for Si MOSFETs, but there have been few reports that demonstrate the formation of p-type GaN layer. We have succeeded to make the p-n junction by implanting Mg ions into n-type GaN layer, but Mg implanted layer showed inhomogeneity including p and n-type regions. Evaluation methods of homogeneity of Mg ion implanted GaN layer by mapping technique using current-voltage characteristics are demonstrated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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