How nanocavities in amorphous Si shrink under ion beam irradiation: An in situ study
| Autor: | F. Fortuna, Mark C Ridgway, James Williams, Harry Bernas, M-O Ruault |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
010302 applied physics
Amorphous silicon Materials science Physics and Astronomy (miscellaneous) Hydrogen Silicon Analytical chemistry chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Amorphous solid Ion chemistry.chemical_compound Ion implantation chemistry 0103 physical sciences Irradiation 0210 nano-technology Shrinkage |
| Zdroj: | Applied Physics Letters. 81:2617-2619 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.1509854 |
| Popis: | Nanocavities were formed in Si substrates by conventional H implantation and thermal annealing, after which the samples were amorphized by Si ion irradiation. The size evolution of the nanocavities was monitored in situ during further ion irradiation with Si or As at temperatures of 300 or 600 K. The decrease in nanocavity diameter during ion irradiation depended linearly on the ion fluence. The rate of shrinkage differed according to the ion beam-induced atomic displacement rate and had little or no temperature dependence. These in situ results shed new light on possible ion-beam-induced nanocavity shrinkage mechanisms. |
| Databáze: | OpenAIRE |
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