Optical properties of GaInNAs quantum wells on misoriented substrates grown by MOVPE
| Autor: | Jun Hashimoto, Tsukuru Katsuyama, Masaaki Nakayama, Hideyuki Doi, Takashi Ishizuka |
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| Rok vydání: | 2007 |
| Předmět: |
Photoluminescence
Materials science business.industry Nitride Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Epitaxy Spectral line Inorganic Chemistry Condensed Matter::Materials Science Materials Chemistry Optoelectronics Metalorganic vapour phase epitaxy Spectroscopy business Electronic band structure Quantum well |
| Zdroj: | Journal of Crystal Growth. 298:116-120 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2006.10.011 |
| Popis: | We have investigated the optical properties of GaInNAs/GaAs single quantum wells grown by metalorganic vapor-phase epitaxy on misoriented GaAs substrates with the use of photoluminescence (PL) spectroscopy sensitive to localization of carriers and photoreflectance (PR) spectroscopy sensitive to the intrinsic band-edge transition. We have found from systematic results of PL spectra, PL-decay profiles and PR spectra that the band-edge energy of the quantum well is lowered with increasing offset angle from 2° to 15° toward (1 1 1)A and that the localization of carriers due to disorders of the band-edge state is enhanced. |
| Databáze: | OpenAIRE |
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