Heterogeneous distribution of interstitial oxygen in annealed Czochralski‐grown silicon crystals

Autor:	Hideki Tsuya, Fumio Shimura, Yoshitake Ohnishi
Rok vydání:	1981
Předmět:	Materials science Physics and Astronomy (miscellaneous) Absorption spectroscopy Silicon chemistry Annealing (metallurgy) Attenuation coefficient Solid oxygen Analytical chemistry chemistry.chemical_element Crystal growth Molar absorptivity Oxygen
Zdroj:	Applied Physics Letters. 38:867-869
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.92202
Popis:	It is shown that interstitial oxygen infrared (IR) absorption at 515 cm−1 decreases anomalously compared with the absorption at 1106 cm−1 in heat‐treated Czochralski‐grown silicon wafers. This phenomenon is described by the close correlation between the absorption coefficient ratio αr (α1106/α515), the half‐bandwidth of the 1106‐cm−1 peak, and the precipitated oxygen content during heat treatments. As a result, it is suggested that on the basis of IR absorption spectrum data interstitital oxygen atoms distribute heterogeneously in a silicon matrix as the forestage of Si‐0 complex precipitation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::81d9105f92b2f1d6f084a2bc5149344e https://doi.org/10.1063/1.92202 Zobrazit plný text záznamu