The formation of resist profile by TMSDEA-treatment and dry development based on oxygen-helium RIE
| Autor: | Young-Jin Jeon, Kwang-Ho Kwon, Byung-Sun Park, Sang-Won Kang, Sun Jin Yun |
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| Rok vydání: | 1991 |
| Předmět: |
Work (thermodynamics)
Materials science Silylation Analytical chemistry chemistry.chemical_element Condensed Matter Physics Oxygen Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Resist Optical emission spectroscopy Electrical and Electronic Engineering Anisotropy Helium |
| Zdroj: | Microelectronic Engineering. 13:115-118 |
| ISSN: | 0167-9317 |
| Popis: | Silylation and dry development are the key processes of DESIRE technique. In the present work, the silylation of resist has been investigated as a function of prebake temperature and TMSDEA concentration. The effect of neutral scatterer, He, on anisotropy of resist profile in dry development has been studied by using optical emission spectroscopy. The dependences of anisotropy and etch rate on RF power and pressure are also described. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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