Photoluminescence of Ga2S3 and Ga2S3: Mn single crystals

Autor:	Young-Hee Won, Jung-Soon Lee, Chang-Dae Kim, Hyun-Nam Kim, Wha-Tek Kim
Rok vydání:	1996
Předmět:	Photoluminescence Chemistry Analytical chemistry General Chemistry Condensed Matter Physics Photochemistry Acceptor Spectral line Atomic electron transition Excited state Materials Chemistry Chemical transport reaction Absorption (electromagnetic radiation) Ground state
Zdroj:	Solid State Communications. 97:1101-1104
ISSN:	0038-1098
DOI:	10.1016/0038-1098(95)00728-8
Popis:	Photoluminescence spectra of Ga2S3 and Ga2S3 : Mn single crystals prepared by the chemical transport reaction method were investigated. We observed a relatively narrow band at 2.14 eV (514 nm) and a broad band centered at 1.81 eV (685 nm) for Ga2S3 at 10 K. For Ga2S3 : Mn, on the other hand, a dominant emission band at 1.81 eV (685 nm) and three weak emission bands at 2.34 (530), 2.14 (579) and 1.54 eV (805 nm) are observed. The origins of the emission bands are identified on the basis of the energy-band scheme proposed from the measurements of optical absorption, TSC and PICTS. The results show that two emission bands for Ga2S3 are attributed to the electron transition from the donor level to the acceptor levels, and four emission bands for Ga2S3 : Mn are associated with the transitions from the excited state 4 T 1 ( 4 G) of Mn2+ to the ground state 6 A 1 ( 6 S) and the acceptor levels.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::81c3eaddf31611afd5575dabd705f78a https://doi.org/10.1016/0038-1098(95)00728-8 Zobrazit plný text záznamu Full Text from ScienceDirect