ItinerantG-type antiferromagnetism inD03-typeV3Z(Z=Al, Ga, In) compounds: A first-principles study
| Autor: | Şaban Tırpancı, Ersoy Şaşıoğlu, Kemal Özdoğan, Iosif Galanakis |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Physics Condensed matter physics Spintronics Inverse 02 engineering and technology Electronic structure Type (model theory) 021001 nanoscience & nanotechnology 01 natural sciences Nuclear magnetic resonance Metastability 0103 physical sciences Antiferromagnetism Condensed Matter::Strongly Correlated Electrons Ideal (ring theory) 0210 nano-technology Ground state |
| Zdroj: | Physical Review B. 94 |
| ISSN: | 2469-9969 2469-9950 |
| DOI: | 10.1103/physrevb.94.064401 |
| Popis: | Heusler compounds are widely studied due to their variety of magnetic properties making them ideal candidates for spintronic and magnetoelectronic applications. ${\mathrm{V}}_{3}\mathrm{Al}$ in its metastable ${\mathrm{D}0}_{3}$-type Heusler structure is a prototype for a rare antiferromagnetic gapless behavior. We provide an extensive study on the electronic and magnetic properties of ${\mathrm{V}}_{3}\mathrm{Al}, {\mathrm{V}}_{3}\mathrm{Ga}$, and ${\mathrm{V}}_{3}\mathrm{In}$ compounds based on electronic structure calculations. We show that the ground state for all three is a $G$-type itinerant antiferromagnetic gapless semiconductor. The large antiferromagnetic exchange interactions lead to very high N\'eel temperatures, which are predicted to be around 1000 K. The coexistence of the gapless and antiferromagnetic behaviors in these compounds can be explained considering the simultaneous presence of three V atoms at the unit cell using arguments which have been employed for usual inverse Heusler compounds. We expect our study on these compounds to enhance further the interest on them towards the optimization of their growth conditions and their eventual incorporation in devices. |
| Databáze: | OpenAIRE |
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