Current–voltage and capacitance–voltage characteristics of metallic polymer/InSe(:Er) Schottky contacts
| Autor: | Y.K. Yoğurtçu, B. Abay, Hasan Efeoglu, Abdulmecit Türüt, Mustafa Sağlam, Yavuz Onganer |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
chemistry.chemical_classification
Materials science business.industry Anodizing Schottky barrier Schottky diode Substrate (electronics) Polymer Condensed Matter Physics Polypyrrole Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Semiconductor chemistry Optoelectronics Electrical and Electronic Engineering business Diode |
| Zdroj: | Microelectronic Engineering. :689-693 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(99)00532-8 |
| Popis: | An investigation of metallic polypyrrole polymer (MPP)/ n -InSe(:Er) (by an anodization process) Schottky barrier diodes (SBDs) fabricated on a cleaved n -type InSe(:Er) substrate, which is a layered semiconductor, has been made. The metallic polypyrrole film provides a good rectifying contact to the n- InSe(:Er) semiconductor. The current–voltage ( I – V ) and capacitance–voltage ( C – V ) characteristics of the diode have been determined at room temperature. The diode shows nonideal I – V behavior with an ideality factor greater than one. In addition, the I – V characteristics of the (MPP)/ n -InSe(:Er) device shows an improvement with an increased Φ b0 and a decreased ideality factor after the polymer melt processing step. The reverse bias C −2 – V characteristics of the diode shows a non-linear behavior. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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