NiGeW ohmic contacts on GaAs heterostructure epitaxial layers
| Autor: | Jenn-Hwa Huang, M. Durlam, Ernie Schirmann, Saied N. Tehrani, Marino J. Martinez, Nyles W. Cody |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Development environment
Materials science Annealing (metallurgy) business.industry Metals and Alloys Heterojunction Surfaces and Interfaces Epitaxy Heterostructure field effect transistors Surfaces Coatings and Films Electronic Optical and Magnetic Materials Transmission electron microscopy Materials Chemistry Optoelectronics business Ohmic contact |
| Zdroj: | Thin Solid Films. :493-496 |
| ISSN: | 0040-6090 |
| Popis: | NiGeW has been successfully implemented as a contact material on GaAs MESFETs in a production environment. However, when identical contacts were used on heterostructure field effect transistors (HFETs), a strong interaction was observed between NiGeW and GaAs/AlGaAs epitaxial layers after annealing. Although NiGeW was considered a refractory contact and was not expected to react with the substrate, we detected defects at the GaAs/AlGaAs interface by cross-sectional transmission electron microscopy. These electrically active defects degrade the HFET performance significantly. As a result, the HFET epitaxial structure had to be re-optimized in order to minimize the observed adverse effect. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect