Simulation of a Parallel Dual‐Metal‐Gate Structure for AlGaN/GaN High‐Electron‐Mobility Transistor High‐Linearity Applications
| Autor: | Jiang Lijuan, Qian Wang, Quan Wang, Wei Li, Changxi Chen, Xiangang Xu, Chun Feng, Hongling Xiao, Yeting Jia, Xiaoliang Wang |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Materials science
business.industry Linearity Algan gan Surfaces and Interfaces High-electron-mobility transistor Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Dual (category theory) Materials Chemistry Optoelectronics Electrical and Electronic Engineering Metal gate business |
| Zdroj: | physica status solidi (a). 218:2100151 |
| ISSN: | 1862-6319 1862-6300 |
| DOI: | 10.1002/pssa.202100151 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Plný text