In situ and ex situ Evaluation of Mechanisms of Lateral Epitaxial Overgrowth

Autor:	H.S. Kim, Ian Watson, Martin D. Dawson, Paul R. Edwards, Robert W. Martin, John M. Girkin, C. J. Deatcher, K.S. Kim, Carol Trager-Cowan, C. Liu
Rok vydání:	2001
Předmět:	In situ Coalescence (physics) business.industry Chemistry Analytical chemistry Chemical vapor deposition Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Faceting Optics Metalorganic vapour phase epitaxy Growth rate Thin film business
Zdroj:	physica status solidi (a). 188:743-746
ISSN:	1521-396X 0031-8965
DOI:	10.1002/1521-396x(200112)188:2<743::aid-pssa743>3.0.co;2-b
Popis:	Metal organic chemical vapour deposition was used for lateral epitaxial overgrowth of GaN on stripe-patterned SiO2 masks 200 and 500 nm in thickness. Overgrowths were conducted under constant conditions, at a nominal temperature of 1140 degreesC. Mechanistic aspects were investigated by a combination of ex situ imaging methods and in situ optical reflectometry. Short growth times resulted in non-coalesced GaN with horizontal (0001) and sloping [1122] side facets. but vertical [1120] facets completely replaced the [1122] facets before coalescence. Reflectance versus time plots from stripe-masked areas suggest an interplay of two distinct interference effects. These data indicate a constant vertical growth rate of approximate to2.6 mum/h after coalescence, and are consistent with enhancement in growth rate in the early stages. associated with transport of precursor species from SiO2 mask regions.
Databáze:	OpenAIRE
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