| Autor: |
M.C. Vella, Michael I. Current, Nicholas H. Tripsas, W. Lukaszek |
| Rok vydání: |
1995 |
| Předmět: |
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| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96:48-51 |
| ISSN: |
0168-583X |
| DOI: |
10.1016/0168-583x(94)00452-8 |
| Popis: |
The mechanism responsible for charging damage to integrated circuit device insulators is treated as a plasma phenomenon, in which the beam/plasma drives potential differences on the process surface. J−V data obtained with the CHARM2 diagnostic in a high current implanter (flood OFF) are fit with a plasma probe model. The fit indicates plasma buildup over the wafer surface. A cold plasma flood is suggested as a means of limiting potential differences during ion implantation. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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