Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

Autor:	Alexander Tsyuk, Y. G. Shreter, Natalia Bochkareva, Y. T. Rebane, Vladislav Voronenkov, Ruslan Gorbunov, Philippe Latyshev, Y. S. Lelikov, Andrey Zubrilov
Rok vydání:	2010
Předmět:	Physics Physics and Astronomy (miscellaneous) business.industry Wide-bandgap semiconductor Resonant-tunneling diode law.invention law Optoelectronics Quantum efficiency Voltage droop business Quantum well Quantum tunnelling Light-emitting diode Leakage (electronics)
Zdroj:	Applied Physics Letters. 96:133502
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.3367897
Popis:	The quantum efficiency of GaN-based light-emitting diodes (LEDs) is investigated at temperatures 77–300 K. It is found that the efficiency droop is due to a decrease in the internal quantum efficiency (IQE) in the low-energy part of the emission spectrum. The efficiency starts to decrease at a temperature independent forward voltage of Umax≈2.9 V. At this voltage tunneling current through the LED-structure begins to dominate. It is suggested that the external quantum efficiency droop is related to reduction of the IQE due to tunneling leakage of carriers from the quantum well (QW) to defect states in barriers, and to reduction of the injection efficiency by excess tunneling current under QW through deep defect states in barriers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8197d9d923696db55a4840f45103461a https://doi.org/10.1063/1.3367897 Zobrazit plný text záznamu