The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si0.7Ge0.3 films by rapid thermal chemical vapor deposition

Autor:	Chiao-Ti Huang, James C. Sturm, Jiun-Yun Li
Rok vydání:	2012
Předmět:	Materials science Physics and Astronomy (miscellaneous) Hydrogen Thermal chemical vapor deposition business.industry Phosphorus Semiconductor materials Inorganic chemistry chemistry.chemical_element Chemical vapor deposition Epitaxy Semiconductor chemistry Chemical engineering business
Zdroj:	Applied Physics Letters. 101:142112
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.4757123
Popis:	The surface segregation of phosphorus in relaxed Si0.7Ge0.3 epitaxial films grown on Si (100) substrates by rapid thermal chemical vapor deposition was investigated in this letter. The effect of the growth temperature on phosphorus segregation was studied experimentally and examined using a two-state model. As the growth temperature is reduced, phosphorus segregation is greatly suppressed, and we report an extremely sharp phosphorus turn-off slope of 6 nm/dec at 500 °C. The sharper slopes at low temperatures are explained by a modified two-state model which includes the effect of increased surface coverage of hydrogen at low temperatures.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8194042fb38814d5966c7c59d6a83a95 https://doi.org/10.1063/1.4757123 Zobrazit plný text záznamu