Improvement in linewidth roughness by postprocessing

Autor:	E. Steve Putna, Kent N. Frasure, Uday Shah, Todd R. Younkin, Manish Chandhok, Willy Rachmady, Wang Yueh
Rok vydání:	2008
Předmět:	Materials science business.industry Extreme ultraviolet lithography Surface finish Photoresist Condensed Matter Physics Laser linewidth Optics Extreme ultraviolet Optoelectronics Node (circuits) Electrical and Electronic Engineering business Lithography Smoothing
Zdroj:	Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2265-2270
ISSN:	1520-8567 1071-1023
Popis:	In order to meet the linewidth roughness (LWR) requirements for the 16nm node, postprocessing methods need to be investigated to reduce the LWR after the lithography step. We present the results of five different techniques applied to a single extreme ultraviolet photoresist. The results show that rinse has the most promise in achieving the nearly two time LWR improvement needed. However, other techniques such as etch/trim, hardbake, vapor smoothing, and ozonation give at least 10%–20% LWR reduction and could be further optimized. Some of the physical based techniques which melt the photoresist reduce the midspatial frequency (50–10nm period) roughness, whereas chemical based techniques reduce the low order spatial frequencies (∼500–50nm period). Hence, a combination of techniques may be the ultimate solution.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::818ca8d07c49a5747b41ae6aa150513b https://doi.org/10.1116/1.3013860 Zobrazit plný text záznamu