Improvements in strain‐balanced InGaAs/GaAs optical modulators for 1047‐nm operation

Autor:	C.R. Stanley, M. C. Holland, D. J. Goodwill, M. McElhinney, Andrew C. Walker
Rok vydání:	1994
Předmět:	Materials science Physics and Astronomy (miscellaneous) Bistability business.industry Photodetection Optical bistability Optical modulator Optics Optoelectronics Quantum efficiency Contrast ratio business Quantum well Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 64:1192-1194
ISSN:	1077-3118 0003-6951
Popis:	We demonstrate a self‐electro‐optic effect device (SEED) designed to work at 1047 nm to match the high power available from a Nd:YLF laser. The device uses a strain‐balanced InGaAs/GaAs multiple quantum well grown on a GaAs substrate with an InGaAs buffer layer of linearly graded composition. It has improved performance compared to previous devices in this system. We have obtained a single pass modulation contrast ratio of 1.74 by applying 13‐V reverse bias, and have found 99% photodetection quantum efficiency under the built‐in junction field. Bistability in a resistor‐SEED configuration is demonstrated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::818454df6bff375ebbcebc05d1bd90c5 https://doi.org/10.1063/1.110886 Zobrazit plný text záznamu