Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers
| Autor: | F. Klopf, S. Deubert, Alfred Forchel, Johann Peter Reithmaier |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) business.industry Physics::Optics Laser pumping Condensed Matter::Mesoscopic Systems and Quantum Hall Effect law.invention Semiconductor laser theory law Quantum dot laser Diode-pumped solid-state laser Optoelectronics Semiconductor optical gain Quantum well laser Atomic physics business Quantum well Tunable laser |
| Zdroj: | Applied Physics Letters. 81:217-219 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | The influence of several design parameters on the temperature stability of the emission wavelength of 980 nm GaInAs/(Al)GaAs quantum-dot lasers was studied. The results obtained agree well with a simplified model based on the inhomogeneously broadened transitions of a quantum-dot ensemble. Using this model, the optimum cavity design for a given gain function can be determined. Following this approach, quantum-dot lasers with low wavelength shifts of 0.16 nm/K were realized, which is only half the value of a typical GaInAs/(Al)GaAs quantum well laser. |
| Databáze: | OpenAIRE |
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