Si/SiO2 interface attack during metal oxide growth under low oxygen pressure
| Autor: | Kikuo Yamabe, Kazuo Shimoyama, Masahiro Kiyohara, Kousuke Kubo |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Analytical chemistry
Oxide General Physics and Astronomy chemistry.chemical_element Crystal growth Surfaces and Interfaces General Chemistry Partial pressure Condensed Matter Physics Epitaxy Oxygen Surfaces Coatings and Films chemistry.chemical_compound chemistry Silicide Layer (electronics) Molecular beam epitaxy |
| Zdroj: | Applied Surface Science. 216:307-311 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(03)00442-2 |
| Popis: | The growths of BaTiO 3 films on interfacial SiO 2 were carried out with molecular beam epitaxy (MBE) in various oxygen partial pressures. In the BaTiO 3 growth on 2 nm-thick SiO 2 film at the oxygen partial pressure of less than 4.8×10 −5 Pa, concavities at the BaTiO 3 film surface and the Si/SiO 2 interface appeared and the Si atoms diffused from the Si substrate to the top BaTiO 3 layer. These were observed only after the film growth in the low oxygen pressure and only on ultrathin interfacial SiO 2 . And the silicide material was formed within the concavity. These results indicate that 2 nm-thick SiO 2 film is not enough to the suppression of the reaction of the metal atoms with Si substrate. |
| Databáze: | OpenAIRE |
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