A 28 nm Embedded Split-Gate MONOS (SG-MONOS) Flash Macro for Automotive Achieving 6.4 GB/s Read Throughput by 200 MHz No-Wait Read Operation and 2.0 MB/s Write Throughput at Tj of 170C
| Autor: | Kenji Noguchi, Takashi Kono, Takashi Ito, Tomoya Saito, Yasuhiko Taito, Hideto Hidaka, Masaya Nakano, Tadaaki Yamauchi |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Engineering business.industry 020208 electrical & electronic engineering Transistor Electrical engineering 02 engineering and technology 01 natural sciences law.invention Spread spectrum Microcontroller Flash (photography) CMOS law Logic gate 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Charge pump Electronic engineering Electrical and Electronic Engineering business Throughput (business) |
| Zdroj: | IEEE Journal of Solid-State Circuits. 51:213-221 |
| ISSN: | 1558-173X 0018-9200 |
| DOI: | 10.1109/jssc.2015.2467186 |
| Popis: | First-ever 28 nm embedded split-gate MONOS (SG-MONOS) flash macros have been developed to increase memory capacity embedded in micro controller units and to improve performance over wide junction temperature range from $-40^{\circ}{\hbox {C}}$ to 170 $^{\circ}{\hbox {C}}$ as demanded strongly in automotive uses. Much attention has been paid to the degradation of the reliability characteristics along with the process shrinkage. Temperature-adjusted word-line overdrive scheme improves random read access frequency by 15% and realizes both of 6.4 GB/s read throughput by 200 MHz no-wait random access of code flash macros and more than ten times longer TDDB lifetime of WL drivers. Temperature-adaptive step pulse erase control (TASPEC) improves the TDDB lifetime of dielectric films between metal interconnect layers by three times. TASPEC is particularly useful for a data flash macro with one million rewrite cycles. Source-side injection (SSI) program with negative back-bias voltage achieves 63% reduction of program pulse time and, consequently, realizes 2.0 MB/s write throughput of code flash macros. A spread spectrum clock generation and a clock phase shift technique are introduced for charge pump clock generation in order to suppress EMI noise due to high write throughput of code flash macros, and peak power of EMI noise is reduced by 19 dB. |
| Databáze: | OpenAIRE |
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