Experimental Auger Recombination Study of a 2 µm GaSb-Based Quantum Well Laser via Sidewall Spontaneous Emission
| Autor: | Wei Wang, Hailong Wang, Xin Guo, Xiaoli Li, Jiaxu Sia, C.Y. Liu |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Auger effect business.industry 02 engineering and technology 021001 nanoscience & nanotechnology Laser law.invention Semiconductor laser theory symbols.namesake 020210 optoelectronics & photonics law Quantum dot laser 0202 electrical engineering electronic engineering information engineering symbols Optoelectronics Spontaneous emission Quantum well laser 0210 nano-technology business Current density Quantum well |
| Zdroj: | 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA). |
| DOI: | 10.1109/ipfa49335.2020.9260833 |
| Popis: | Auger recombination, a process closely related to the device reliability, of a working 2 µm InGaSb/AlGaAsSb quantum well (QW) laser is first investigated via measuring its spontaneous emission. By extracting and analyzing the Z power parameter, severe Auger recombination at relatively low current density/carrier density of GaSb-based lasers has been experimentally revealed. |
| Databáze: | OpenAIRE |
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