Electrical Characteristics of TaOxNy/ZrSixOy Stack Gate Dielectric for MOS Device Applications

Autor:	Kiju Im, Hyung-Suk Jung, Hyunsang Hwang, Hyundoek Yang
Rok vydání:	2001
Předmět:	Zirconium Auger electron spectroscopy Materials science business.industry Gate dielectric Tantalum chemistry.chemical_element Equivalent oxide thickness Dielectric Microbiology law.invention Capacitor chemistry law Optoelectronics Silicon oxide business
Zdroj:	MRS Proceedings. 670
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-670-k4.6
Popis:	This letter describes a unique process for the preparation of high quality tantalum oxynitride (TaOxNy) with zirconium silicate (ZrSixOy) as an interfacial layer for use in gate dielectric applications. Compared with conventional native silicon oxide and oxynitride as an interfacial layer, tantalum oxynitride (TaOxNy) MOS capacitors using zirconium silicate (ZrSixOy) as an interfacial layer exhibit lower leakage current levels at the same equivalent oxide thickness. We were able to confirm TaOxNy/ZrSixOy stack structure by auger electron spectroscopy (AES) and transmission electron microscope (TEM) analysis. The estimated dielectric constant of TaOxNy and ZrSixOywere approximately 67 and 7, respectively. The zirconium silicate is a promising interfacial layer for future high-k gate dielectric applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::81682fdd3915423a12f916c8ad5f282f https://doi.org/10.1557/proc-670-k4.6 Zobrazit plný text záznamu Full text from SpringerLink