Power thyristor rating practices
| Autor: | R.F. Dyer, J.S. Read |
|---|---|
| Rok vydání: | 1967 |
| Předmět: |
Gate turn-off thyristor
Engineering business.industry Electrical engineering Thyristor MOS-controlled thyristor law.invention Integrated gate-commutated thyristor Phase-fired controllers Static induction thyristor law Thyristor drive Electronic engineering Power semiconductor device Electrical and Electronic Engineering business |
| Zdroj: | Proceedings of the IEEE. 55:1288-1301 |
| ISSN: | 0018-9219 |
| DOI: | 10.1109/proc.1967.5829 |
| Popis: | The power thyristor is the most important semicoductor device used in the control of electric power. An explanation of thyristor ratings and rating presentation is required for the complete understanding and successful application of these devices. This paper not only explains the meaning of thyristor temperature, voltage, current, and gate ratings but also presents insights into how these ratings are developed. Both the semiconductor controlled rectifier (SCR), which is properly called a reverse blocking triode thyristor, and the bidirectional thyristor rating methods are discussed. SCR rating are further divided into those applying to phase control applications at power frequencies and those applying to high repetition rate inverter and pulse current appications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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