Characterization of Single-Event Burnout in Power MOSFET Using Backside Laser Testing

Autor:	A. Luu, Florent Miller, F. Prud'homme, R. Gaillard, N. Buard, P. Poirot, T. Carriere
Rok vydání:	2006
Předmět:	Nuclear and High Energy Physics Materials science Burnout Laser law.invention Safe operating area Nuclear Energy and Engineering law MOSFET Electronic engineering Breakdown voltage Power semiconductor device Sensitivity (control systems) Electrical and Electronic Engineering Power MOSFET
Zdroj:	IEEE Transactions on Nuclear Science. 53:3145-3152
ISSN:	1558-1578 0018-9499
DOI:	10.1109/tns.2006.885376
Popis:	This paper presents a new methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards Single-Event Burnout. It is shown that this technique can be used to define the safe operating area
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8141145be27984ecff941394fcae20ff https://doi.org/10.1109/tns.2006.885376 Zobrazit plný text záznamu