Laser interference structuring of a-Ge films on GaAs

Autor:	F. Dondeo, I. Chambouleyron, Paulo V. Santos, Uwe Jahn, Antonio Ricardo Zanatta, A. Trampert
Rok vydání:	2002
Předmět:	Materials science business.industry General Physics and Astronomy chemistry.chemical_element Germanium Epitaxy Laser law.invention Gallium arsenide chemistry.chemical_compound Optics Semiconductor chemistry law Laser interference Crystallization Nanosecond laser business
Zdroj:	Journal of Applied Physics. 91:2916-2920
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1448674
Popis:	We have investigated the laser interference crystallization (LIC) of amorphous germanium films on (100)-oriented GaAs substrates using nanosecond laser pulses. We demonstrate that LIC can produce periodic arrays of epitaxially crystallized Ge lines on GaAs with submicrometer widths. The gratings display a surface undulation with faceted surfaces, which depends on laser fluency. The undulation is attributed to the lateral solidification process induced by the temperature gradients created during the LIC process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::8121070f1a4f6113e423a4350e6087fb https://doi.org/10.1063/1.1448674 Zobrazit plný text záznamu