In-situ spectroscopic study of the As and Te on the Si (112) surface for high-quality epitaxial layers
| Autor: | R. N. Jacobs, M. Groenert, M. Jaime-Vasquez, M. Martinka |
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| Rok vydání: | 2006 |
| Předmět: |
Passivation
Scattering Analytical chemistry chemistry.chemical_element Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Adsorption chemistry X-ray photoelectron spectroscopy Materials Chemistry Electrical and Electronic Engineering Tellurium Spectroscopy Molecular beam epitaxy |
| Zdroj: | Journal of Electronic Materials. 35:1455-1460 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-006-0283-x |
| Popis: | A detailed analysis of the As-exposed Si (112) and subsequent Te exposure was performed. X-ray photoelectron spectroscopy shows that the Te- and As-exposed Si (112) surface had 70% As and 27% Te coverage, respectively. Direct surface coverage measurement with ion scattering spectroscopy (ISS) shows that the Si (111) surface is completely covered by As, and that of the Si (112) had about 78% and 20% coverage of As and Te, respectively. Finally, using ISS shadowing effects, it was found that the Te atoms were positioned mainly on the step edges. |
| Databáze: | OpenAIRE |
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